Reliability and Radiation Effects on Advanced CMOS Technologies
Meetings... If we knew what we were doing, it wouldn't be called research.

A. Einstein



Ionizing radiation is everywhere. You may not know, but every object at sea level is constantly bombarded by a shower of high-energy neutrons. And you can’t fly away from radiation: the particle flux is far more intense at avionics altitude, and space is one of the worst place you can think of, as far as radiation is concerned.

Ionizing radiation can do much harm to your electronics, from flipping a memory bit, to burning-out a power MOSFET.

Our group at the University of Padova has been studying these effects for over ten years, and has built a considerable know-how in developing and using the complex facilities needed for the assessment of radiation effects in state-of-the-art chips.

Whether you’re a curious student or a designer of safety-critical or dependable applications (automotive, biomedical, space), follow these pages and discover what soft errors and radiation effects are, why you should care about them, and see how we can help with our research.


RREACT is Alessandro Paccagnella, Simone Gerardin, Marta Bagatin, Giorgio Cellere



  • The paper "Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories" by M. Bagatin, S. Gerardin, A. Paccagnella et al. has been awarded ex-aequo the outstanding paper award at NSREC17 in New Orleans, together with the work "Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses" by F. Faccio, CERN, et al. with coauthors from RREACT, S. Gerardin, A. Paccagnella and S. Bonaldo.

  • September 16-21 2018: RADECS 2018 in Gothenburg, featuring a short course talk by M. Bagatin and two technical presentations by the RREACT group

  • July 16-20 2018: NSREC 2018 in Kona, Hawaii with a short course chaired by S. Gerardin and two technical presentations by the RREACT group