RREACT
Reliability and Radiation Effects on Advanced CMOS Technologies

 

 

Ionizing radiation effects on ESD protection structures

In collaboration with Prof. Meneghesso and Prof. Zanoni's group, we work on single events effects, such as the snapback induced by a heavy-ion strike, in electrostatic discharge (ESD) protection structures for advanced CMOS circuits.
Furthermore, we investigate total ionizing dose effects in such structures. In particular, we focus oon the impact of the Enhanced Low-Dose-Rate Sensitivity (ELDRS) effects on the ESD performances of bipolar devices as SCR based ESD protection structures.