NBTI
Reliability and Radiation Effects on Advanced CMOS Technologies

 

 

[TUTORIAL UNDER CONSTRUCTION]

Negative bias temperature instability (NBTI) is the progressive degradation of PMOSFETs parameters which occurs at moderately high temperatures.

NBTI shows as a progressive shift in the threshold voltage of PMOSFETs, due to both interface-state generation and charge trapping (this component tends to become less important as the oxide thickness is reduced).

When the bias is removed, a recovery takes place, which greatly complicates the evaluation of NBTI.

Hydrogen is believed to be the cause of NBTI.

 

 

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