Gate Oxide Breakdown
Reliability and Radiation Effects on Advanced CMOS Technologies

 

 

[TUTORIAL UNDER CONSTRUCTION]

Gate oxide breakdown (BD) is due to the progressive build-up of defects inside the gate oxide of a MOSFET, which eventually leads to the creation of a conductive path across the dielectric.

The creation of defects is a statistical process. When a critical defect density is reached, the BD is triggered.

 

 

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