Non-volatile Memories
Reliability and Radiation Effects on Advanced CMOS Technologies




Non-volatile memories have the property of retaining the information even in the absence of supply voltage, and are used in a ever-growing variety of applications.

Flash memories

Floating gate memories rely on a tiny floating gate, which is isolated from the control gate and the channel by two dielectrics layers.

Nonvolatile memories, i.e., memory elements which can retain the stored data for very long times even if not powered on, are one of the key technologies found in the majority of electronic devices of common or less common use, from mp3 players or set-top boxes to safety-critical equipments, aero-spatial, and medical applications. In the last years, a unique player has emerged as the leader among solid-state nonvolatile memories, that is, the Floating Gate (FG) technology. A FG device is a MOSFET where a polysilicon layer, called FG, is interposed between the substrate and the gate (called Control Gate, CG), and each bit of information is written in the FG MOSFET by tailoring the number of excess electrons or holes in the FG, thus changing the threshold voltage VTH of the transistor.

Phase change memories

Phase change memories are based on a chalcogenide material, which can be easily turned from crystalline to amorphous and vice versa.

Resistive memories

Resisive memories rely on the resistance changes induced by an electric field in a thin film.




The technology of choice for future of non-volatile memories is under great debate.