Publications
Reliability and Radiation Effects on Advanced CMOS Technologies

 

 

Journals

2010

M. Bagatin, S. Gerardin, G. Cellere, A. Paccagnella, A. Visconti, S. Beltrami, M. Bonanomi, R. Harboe-Sørensen, “Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Technology Dependence,” IEEE Transactions on Nuclear Science, Volume 57, Issue 4, August 2010, pp.  1835-1841

M. Bagatin, S. Gerardin, A. Paccagnella, G. Cellere, F. Irom, D.N. Nguyen, “Destructive Events in NAND Flash Memories Irradiated with Heavy Ions”, Microelectronics Reliability, Volume 50, September 2010, pp. 1832-1836

M. Bagatin, S. Gerardin, A. Paccagnella, G. Cellere, A. Visconti, M. Bonanomi, “Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID”, IEEE Transactions on Nuclear Science, Volume 57, December 2010, pp. 3407-3413

M. Bagatin, S. Gerardin, A. Paccagnella, F. Faccio, “Impact of NBTI Aging on the Single Event Upset of SRAM Cells”, IEEE Transactions on Nuclear Science, Volume 57, December 2010, pp. 3245-3250

C. Claeys, S. Put, A. Griffoni, A. Cester, S. Gerardin, G. Meneghesso, A. Paccagnella, and E. Simoen, "Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies" ECS Transactions, Vol. 27, Issue 1, Pages: 39 - 46, 2010

S. Gerardin, A. Paccagnella, “Present and Future Non-volatile Memories for Space,” IEEE Transactions on Nuclear Science, Volume 57, December 2010, pp. 3016-3039

S. Gerardin, M. Bagatin, A. Paccagnella, G. Cellere, A. Visconti, M. Bonanomi, A. Hjalmarsson, A.V. Prokofiev, “Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays”, IEEE Transactions on Nuclear Science, Volume 57, December 2010, 3199-3205

S. Gerardin, M. Bagatin, A. Paccagnella, G. Cellere, A. Visconti, M. Bonanomi, “Impact of Total Dose on Heavy-ion Upsets in Floating Gate Arrays”, Microelectronics Reliability, Volume 50, September 2010, pp. 1837-1841

A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, C. Claeys, “Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs,”  IEEE Transactions on Nuclear Science, Volume 57, Issue 4, August 2010, pp. 1924-1932

F. Irom, D. N. Nguyen, M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, “Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories,”  IEEE Transactions on Nuclear Science, Volume 57, Issue 1, February 2010, pp. 266-271

M. Silvestri, S. Gerardin, F. Faccio, A. Paccagnella, “Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-ray Irradiation,”  IEEE Transactions on Nuclear Science, Volume 57, Issue 4, August 2010, pp. 1842-1848

2009

M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami, “TID Sensitivity of NAND Flash Memory Building Blocks,” IEEE Transactions on Nuclear Science, vol. 56, pp. 1909-1913, Aug. 2009

M. Bagatin, S. Gerardin, G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami, “Error Instability in Floating Gate Flash Memories Exposed to TID,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3267-3273, Dec. 2009

N. Battezzati, S. Gerardin, A. Manuzzato, D. Merodio, A. Paccagnella, C. Poivey, L. Sterpone, M. Violante, “Methodologies to Study Frequency-Dependent Single Event Effects Sensitivity in Flash-Based FPGAs,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3534-3541, Dec. 2009

G. Cellere, S. Gerardin, M. Bagatin, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami, R. Harboe-Sorensen, A. Virtanen, P. Roche, “Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?,” IEEE Electron Device Letters, vol. 30, pp. 178-180, Feb. 2009

A. Gasperin, E. Amat, J. Martin, M. Porti, M. Nafria, A. Paccagnella, “Peculiar characteristics of nanocrystal memory cells programming window,” Journal of Vacuum Science \& Technology B, vol. 27, pp. 512-516, Jan.-Feb. 2009

A. Gasperin, E. Amat, M. Porti, J. Martin-Martinez, M. Nafria, X. Aymerich, A. Paccagnella, “Effects of the Localization of the Charge in Nanocrystal Memory Cells,” IEEE Transactions on Electron Devices, vol. 56, pp. 2319-2326, Oct. 2009

A. Gasperin, A. Paccagnella, G. Ghidini, A. Sebastiani, “Heavy Ion Irradiation Effects on Capacitors With SiO2 and ONO as Dielectrics,” IEEE Transactions on Nuclear Science, vol. 56, pp. 2218-2224, Aug. 2009

A. Griffoni, S. Gerardin, P. J. Roussel, R. Degraeve, G. Meneghesso, A. Paccagnella, E. Simoen, C. Claeys, “A Statistical Approach to Microdose Induced Degradation in FinFET Devices,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3285-3292, Dec. 2009

A. Griffoni, M. Silvestri, S. Gerardin, G. Meneghesso, A. Paccagnella, B. Kaczer, M. d. P. de ten Broeck, R. Verbeeck, A. Nackaerts, “Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays,” IEEE Transactions on Nuclear Science, vol. 56, pp. 2205-2212, Aug. 2009

J. Martin-Martinez, S. Gerardin, E. Amat, R. Rodriguez, M. Nafria, X. Aymerich, A. Paccagnella, G. Ghidini, “Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters,” IEEE Transactions on Electron Devices, vol. 56, pp. 2155-2159, Sep. 2009

J. Martin-Martinez, S. Gerardin, R. Rodriguez, M. Nafria, X. Aymerich, A. Paccagnella, G. Ghidini, “Gate dielectric degradation in CMOS inverters,” Microlectronic Engineering, vol. 86, pp. 2123-2126, Oct. 2009

A. Paccagnella, S. Gerardin, G. Cellere, “Radiation damage on dielectrics: Single event effects,” Journal of Vacuum Science \& Technology B, vol. 27, pp. 406-410, Jan.-Feb. 2009

M. Porti, N. Nafria, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini, “Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale,” Journal of Vacuum Science \& Technology B, vol. 27, pp. 421-425, Jan.-Feb. 2009

M. Silvestri, S. Gerardin, A. Paccagnella, G. Ghidini, “Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions,” IEEE Transactions on Nuclear Science, vol. 56, pp. 1964-1970, Aug. 2009

M. Silvestri, S. Gerardin, R. Schrimpf, D. Fleetwood, F. Faccio, A. Paccagnella, “The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3244-3249, Dec. 2009

 

2008

C. Andreani, A. Pietropaolo, A. Salsano, G. Gorini, M. Tardocchi, A. Paccagnella, S. Gerardin, C. D. Frost, S. Ansell, S. P. Platt, “Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source”, Applied Physics Letter, Volume 92, Issue 11, Mar 2008, 114101

M. Bagatin, S. Gerardin, G. Cellere, A. Paccagnella, A. Visconti, S. Beltrami, R. Harboe-Sørensen, A. Virtanen, “Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions”, IEEE Transactions on Nuclear Science, Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):3302 – 3308

G. Cellere, A. Paccagnella, A. Visconti, S. Beltrami, J. Schwank, M. Shaneyfelt, D. Lambert, P. Paillet, V. Ferlet-Cavrois, J. Baggio, R-H Harboe-Sorensen, E. Blackmore, A. Virtanen, P. Fuochi, “Direct Evidence of Secondary Recoiled Nuclei From High Energy Protons” Nuclear Science, IEEE Transactions on Nuclear Science, Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):2904 - 2913

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami, R. Harboe-Sorensen, A. Virtanen, “Effect of Ion Energy on Charge Loss From Floating Gate Memories”, IEEE Transactions on Nuclear Science, Volume 55, Issue 4, Part 1, Aug. 2008 Page(s):2042 - 2047

A. Gasperin, A. Paccagnella, J.R. Schwank, G. Vizkelethy, F. Ottogalli, F. Pellizzer, “Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors”, IEEE Transactions on Nuclear Science, Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):3189 - 3196

A. Gasperin, N. Wrachien, A. Paccagnella, F. Ottogalli, U. Corda, P. Fuochi, M. Lavalle, “Total Ionizing Dose Effects on 4 Mbit Phase Change Memory Arrays”, IEEE Transactions on Nuclear Science, Volume 55, Issue 4, Part 1, Aug. 2008 Page(s):2090 - 2097

A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, C. Claeys, “Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs”, IEEE Transactions on Nuclear Science, Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):3182 – 3188.

A. Manuzzato, S. Gerardin, A. Paccagnella, L. Sterpone, M. Violante, “Effectiveness of TMR-based techniques to mitigate alpha-induced SEU accumulation in commercial SRAM-based FPGAs”, IEEE Transactions on Nuclear Science, Volume 55, Aug. 2008, Issue 4, Part 1, Aug. 2008 Page(s):1968 - 1973.

M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, L. Gonella, “Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure”, IEEE Transactions on Nuclear Science, Volume 55, Aug. 2008, Issue 4, Part 1 , Aug. 2008 Page(s):1960 – 1967.

M. Silvestri, S. Gerardin, A. Paccagnella, F. Faccio, “Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout”, IEEE Transactions on Nuclear Science, Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):3216 – 3223.

 

2007

M. Porti, S. Gerardin, M. Nafria, X. Aymerich, A. Cester, and A. Paccagnella, "Using afm related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 1891-1897.

A. Gasperin, G. Ghidini, A. Cester, and A. Paccagnella, "Oxide-nitride-oxide capacitor reliability under heavy-ion irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 1898-1905.

A. Cester, N. Wrachien, A. Gasperin, A. Paccagnella, R. Portoghese, and C. Gerardi, "Radiation tolerance of nanocrystal-based flash memory arrays against heavy ion irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 2196-2203.

S. Gerardin, A. Griffoni, A. Tazzoli, A. Cester, G. Meneghesso, and A. Paccagnella, "Electrostatic discharge effects in irradiated fully depleted soi mosfets with ultra-thin gate oxide", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 2204-2209.

A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen, and C. Claeys, "Effects of heavy-ion strikes on fully depleted soi mosfets with ultra-thin gate oxide and different strain-inducing techniques", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 2257-2263.

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, R. Harboe-Sorensen, and A. Virtanen, "Angular dependence of heavy ion effects in floating gate memory arrays", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 2371-2378.

A. Cester, A. Gasperin, N. Wrachien, A. Paccagnella, V. Ancarani, and C. Gerardi, "Ionising radiation and electrical stress on nanocrystal memory cell array", MICROELECTRONICS RELIABILITY (2007) 47: pp. 602-605.

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, S. Beltrami, J. Schwank, M. Shaneyfelt, and P. Paillet, "Total ionizing dose effects in nor and nand flash memories", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 1066-1070.

M. Violante, L. Sterpone, A. Manuzzato, S. Gerardin, P. Rech, M. Bagatin, A. Paccagnella, C. Andreani, G. Gorini, A. Pietropaolo, G. Cardarilli, S. Pontarelli, and C. Frost, "A new hardware/software platform and a new 1/e neutron source for soft error studies: testing fpgas at the isis facility", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007) 54: pp. 1184-1189.

M. Porti, S. Gerardin, M. Nafria, X. Aymerich, A. Cester, A. Paccagnella, P. Schiavuta, and R. Pierobon, "Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution", MICROELECTRONIC ENGINEERING (2007) 84: pp. 1956-1959.

2006

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, and P. McNulty, "Single-ion dosemeter based on floating gate memories", RADIATION PROTECTION DOSIMETRY (2006) 122: pp. 457-459.

P. McNulty, K. Poole, M. Crissler, J. Reneau, G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, D. Stroebel, M. Fennell, and R. Perez, "Sensitivity and dynamic range of fgmos dosemeters", RADIATION PROTECTION DOSIMETRY (2006) 122: pp. 460-462.

A. Cester, A. Gasperin, N. Wrachien, A. Paccagnella, V. Ancarani, and C. Gerardi, "Impact of heavy-ion strikes on nanocrystal non volatile memory cell arrays", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006) 53: pp. 3195-3202.

G. Cellere, A. Paccagnella, A. Visconti, and A. Bonanomi, "Secondary effects of single ions on floating gate memory cells", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006) 53: pp. 3291-3297.

G. Cellere, A. Paccagnella, A. Visconti, and M. Bonanomi, "Variability in ki memories performance after irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006) 53: pp. 3349-3355.

S. Gerardin, M. Bagatin, A. Cester, A. Paccagnella, and B. Kaczer, "Impact of heavy-ion strikes on minimum-size mosfets with ultra-thin gate oxide", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006) 53: pp. 3675-3680.

A. Gasperin, A. Cester, N. Wrachien, A. Paccagnella, V. Ancarani, and C. Gerardi, "Radiation-induced modifications of the electrical characteristics of nanocrystal memory cells and arrays", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006) 53: pp. 3693-3700.

S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, and G. Ghidini, "Degradation of static and dynamic behavior of cmos inverters during constant and pulsed voltage stress", MICROELECTRONICS RELIABILITY (2006) 46: pp. 1669-1672.

F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella, "Degradation induced by 2-mev alpha particles on algan/gan high electron mobility transistors", MICROELECTRONICS RELIABILITY (2006) 46: pp. 1750-1753.

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, and S. Beltrami, "Single event effects in nand flash memory arrays", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006) 53: pp. 1813-1818.

S. Gerardin, A. Gasperin, A. Cester, A. Paccagnella, G. Ghidini, A. Candelori, N. Bacchetta, D. Bisello, and M. Glaser, "Impact of 24-gev proton irradiation on 0.13-mu m cmos devices", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006) 53: pp. 1917-1922.

G. Cellere, A. Paccagnella, L. Larcher, A. Visconti, and M. Bonanomi, "Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells", APPLIED PHYSICS LETTERS (2006) 88: .

G. Cellere, A. Paccagnella, A. Visconti, and M. Bonanomi, "Subpicosecond conduction through thin sio2 layers triggered by heavy ions", JOURNAL OF APPLIED PHYSICS (2006) 99: .

2005

G. Cellere, L. Larcher, A. Paccagnella, A. Visconti, and M. Bonanomi, "Radiation induced leakage current in floating gate memory cells", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 2144-2152.

S. Gerardin, A. Cester, A. Paccagnella, G. Gasiot, P. Mazoyer, and P. Roche, "Radiation-induced breakdown in 1.7 nm oxynitrided gate oxides", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 2210-2216.

A. Cester, S. Gerardin, A. Paccagnella, E. Simoen, and C. Claeys, "Electrical stresses on ultra-thin gate oxide soi mosfets after irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 2252-2258.

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, A. Candelori, and S. Lora, "Effect of different total ionizing dose sources on charge loss from programmed floating gate cells", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 2372-2377.

M. Alderighi, A. Candelori, F. Casini, S. D'Angelo, M. Mancini, A. Paccagnella, S. Pastore, and G. Sechi, "Seu sensitivity of virtex configuration logic", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 2462-2467.

P. McNulty, K. Poole, M. Crisler, J. Reneau, G. Cellere, A. Paccagnella, D. Stroebel, M. Fennell, R. Perez, M. Randall, and L. Call, "Improvements in resolution and dynamic range for fgmos dosimetry", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 2597-2601.

M. Porti, M. Nafria, X. Aymerich, A. Cester, A. Paccagnella, and S. Cimino, "Electrical characterization at a nanometer scale of weak spots in irradiated sio2 gate oxides", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 1457-1461.

E. Miranda, A. Cester, J. Sune, A. Paccagnella, and G. Ghidini, "Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting poisson-gaussian process", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005) 52: pp. 1462-1467.

S. Gerardin, A. Cester, A. Paccagnella, and G. Ghidini, "Impact of fowler-nordheim and channel hot carrier stresses on mosfets with 2.2nm gate oxide", MICROELECTRONIC ENGINEERING (2005) 80: pp. 178-181.

G. Cellere, and A. Paccagnella, "Comments on "flash memory under cosmic and alpha irradiation"", IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2005) 5: pp. 296-297.

M. Porti, M. Nafria, X. Aymerich, A. Cester, A. Paccagnella, and S. Cimino, "Irradiation induced weak spots in sio2 gate oxides of mos devices observed with c-afm", ELECTRONICS LETTERS (2005) 41: pp. 101-103.

G. Cellere, A. Paccagnella, A. Mazzocchi, and M. Valentini, "Influence of dielectric breakdown on mosfet drain current", IEEE TRANSACTIONS ON ELECTRON DEVICES (2005) 52: pp. 211-217.

2004

S. Gerardin, A. Cester, A. Paccagnella, and G. Ghidini, "Mosfet drain current reduction under fowler-nordheim and channel hot carrier injection before gate oxide breakdown", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2004) 7: pp. 175-180.

A. Cester, S. Gerardin, A. Paccagnella, J. Schwank, G. Vizkelethy, A. Candelori, and G. Ghidini, "Drain current decrease in mosfets after heavy ion irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004) 51: pp. 3150-3157.

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, and A. Candelori, "Transient conductive path induced by a single ion in 10 nm sio2 layers", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004) 51: pp. 3304-3311.

M. Violante, L. Sterpone, M. Ceschia, D. Bortolato, P. Bernardi, M. Reorda, and A. Paccagnella, "Simulation-based analysis of seu effects in sram-based fpgas", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004) 51: pp. 3354-3359.

G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, P. Caprara, and S. Lora, "A model for tid effects on floating gate memory cells", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004) 51: pp. 3753-3758.

G. Cellere, and A. Paccagnella, "A review of ionizing radiation effects in floating gate memories", IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2004) 4: pp. 359-370.

G. Cellere, A. Paccagnella, S. Lora, A. Pozza, G. Tao, and A. Scarpa, "Charge loss after co-60 irradiation of flash arrays", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004) 51: pp. 2912-2916.

G. Cellere, A. Paccagnella, A. Visconti, and M. Bonanomi, "Ionizing radiation effects on floating gates", APPLIED PHYSICS LETTERS (2004) 85: pp. 485-487.

A. Cester, L. Bandiera, S. Cimino, A. Paccagnella, and G. Ghidini, "Incidence of oxide and interface degradation on mosfet performance", MICROELECTRONIC ENGINEERING (2004) 72: pp. 66-70.

A. Ceschia, A. Violante, M. Reorda, A. Paccagnella, P. Bernardi, M. Rebaudengo, D. Bortolato, M. Bellato, P. Zambolin, and A. Candelori, "Identification and classification of single-event upsets in the configuration memory of sram-based fpgas (vol 50, pg 2088, 2003)", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2004) 51: pp. 328-328.

A. Cester, A. Paccagnella, G. Ghidini, S. Deleonibus, and G. Guegan, "Collapse of mosfet drain current after soft breakdown", IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2004) 4: pp. 63-72.

G. Cellere, A. Paccagnella, and M. Valentini, "Fga effects on plasma-induced damage: beyond the appearances", IEEE TRANSACTIONS ON ELECTRON DEVICES (2004) 51: pp. 332-338.

G. Cellere, M. Valentini, M. Caminati, and A. Paccagnella, "Influence of process parameters on plasma damage during inter-metal dielectric deposition", MICROELECTRONIC ENGINEERING (2004) 71: pp. 133-138.

2003

M. Ceschia, M. Violante, M. Reorda, A. Paccagnella, P. Bernardi, M. Rebaudengo, D. Bortolato, M. Bellato, P. Zambolin, and A. Candelori, "Identification and classification of single-event up sets in the configuration memory of sram-based fpgas", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2003) 50: pp. 2088-2094.

A. Cester, S. Cimino, E. Miranda, A. Candelori, G. Ghidini, and A. Paccagnella, "Statistical model for radiation-induced wear-out of ultra-thin gate oxides after exposure to heavy ion irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2003) 50: pp. 2167-2175.

L. Larcher, G. Cellere, A. Paccagnella, A. Chimenton, A. Candelori, and A. Modelli, "Data retention after heavy ion exposure of floating gate memories: analysis and simulation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2003) 50: pp. 2176-2183.

E. Miranda, A. Cester, and A. Paccagnella, "Stochastic modeling of progressive breakdown in ultrathin sio2 films", APPLIED PHYSICS LETTERS (2003) 83: pp. 5014-5016.

S. Cimino, A. Cester, A. Paccagnella, and G. Ghidini, "Ionising radiation effects on mosfet drain current", MICROELECTRONICS RELIABILITY (2003) 43: pp. 1247-1251.

G. Cellere, M. Valentini, L. Pantisano, K. Cheung, and A. Paccagnella, "Different nature of process-induced and stress-induced defects in thin sio2 layers", IEEE ELECTRON DEVICE LETTERS (2003) 24: pp. 393-395.

A. Cester, S. Cimino, A. Paccagnella, G. Ghibaudo, G. Ghidini, and J. Wyss, "Accelerated wedr-out of ultra-thin gate oxides after irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2003) 50: pp. 729-734.

E. Miranda, A. Cester, and A. Paccagnella, "Logistic model for leakage current in electrical stressed ultra-thin gate oxides", ELECTRONICS LETTERS (2003) 39: pp. 749-750.

2002

G. Cellere, M. Valentini, and A. Paccagnella, "Plasma-induced si/sio2 interface damage in cmos", MICROELECTRONIC ENGINEERING (2002) 63: pp. 433-442.

G. Cellere, L. Larcher, M. Valentini, and A. Paccagnella, "Micro breakdown in small-area ultrathin gate oxides", IEEE TRANSACTIONS ON ELECTRON DEVICES (2002) 49: pp. 1367-1374.

A. Cester, L. Bandiera, G. Ghidini, I. Bloom, and A. Paccagnella, "Soft breakdown current noise in ultra-thin gate oxides", SOLID-STATE ELECTRONICS (2002) 46: pp. 1019-1025.

L. Pantisano, K. Cheung, P. Roussel, and A. Paccagnella, "The impact of plasma-charging damage on the rf performance of deep-submicron mosfet", IEEE ELECTRON DEVICE LETTERS (2002) 23: pp. 309-311.

G. Cellere, A. Paccagnella, L. Pantisano, M. Valentini, O. Flament, O. Mousseau, and P. Fuochi, "Radiation-induced depassivation of latent plasma damage", MICROELECTRONIC ENGINEERING (2002) 60: pp. 439-450.

A. Cester, A. Paccagnella, and G. Ghidini, "Stress induced leakage current under pulsed voltage stress", SOLID-STATE ELECTRONICS (2002) 46: pp. 399-405.

2001

A. Cester, L. Bandiera, M. Ceschia, G. Ghidini, and A. Paccagnella, "Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2001) 48: pp. 2093-2100.

G. Cellere, P. Pellati, A. Chimenton, J. Wyss, A. Modelli, L. Larcher, and A. Paccagnella, "Radiation effects on floating-gate memory cells", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2001) 48: pp. 2222-2228.

L. Bandiera, A. Cester, A. Paccagnella, G. Ghidini, and I. Bloom, "Detrended fluctuation analysis of the soft breakdown current", MICROELECTRONIC ENGINEERING (2001) 59: pp. 49-53.

A. Cester, A. Paccagnella, and G. Ghidini, "Time decay of stress induced leakage current in thin gate oxides by low-field electron injection", SOLID-STATE ELECTRONICS (2001) 45: pp. 1345-1353.

A. Candelori, M. Ceschia, A. Paccagnella, J. Wyss, D. Bisello, and G. Ghidini, "Thin oxide degradation after high-energy ion irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2001) 48: pp. 1735-1743.

A. Cester, A. Paccagnella, J. Sune, and E. Miranda, "Post-radiation-induced soft breakdown conduction properties as a function of temperature", APPLIED PHYSICS LETTERS (2001) 79: pp. 1336-1338.

A. Candelori, A. Paccagnella, G. Raggi, J. Wyss, D. Bisello, and G. Ghidini, "High energy si ion irradiation effects on 10 nm thick oxide mos capacitors", JOURNAL OF NON-CRYSTALLINE SOLIDS (2001) 280: pp. 193-201.

L. Larcher, A. Paccagnella, and G. Ghidini, "Gate current in ultrathin mos capacitors: a new model of tunnel current", IEEE TRANSACTIONS ON ELECTRON DEVICES (2001) 48: pp. 271-278.

L. Larcher, A. Paccagnella, and G. Ghidini, "A model of the stress induced leakage current in gate oxides", IEEE TRANSACTIONS ON ELECTRON DEVICES (2001) 48: pp. 285-288.

2000

M. Ceschia, A. Paccagnella, M. Turrini, A. Candelori, G. Ghidini, and J. Wyss, "Heavy ion irradiation of thin gate oxides", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000) 47: pp. 2648-2655.

G. Cellere, A. Paccagnella, L. Pantisano, P. Colombo, and M. Valentini, "Low-field latent plasma damage depassivation in thin-oxide mos", MICROELECTRONICS RELIABILITY (2000) 40: pp. 1347-1352.

A. Cester, A. Paccagnella, and G. Ghidini, "Pulsed voltage stress on thin oxides", ELECTRONICS LETTERS (2000) 36: pp. 1319-1320.

M. Ceschia, A. Paccagnella, S. Sandrin, G. Ghidini, J. Wyss, M. Lavale, and O. Flament, "Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or x-ray irradiation", IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000) 47: pp. 566-573

A. Cester, A. Paccagnella, and G. Ghidini, "Time decay of stress induced leakage current in thin gate oxides by low-field electron injection", MICROELECTRONICS RELIABILITY (2000) 40: pp. 715-718.

A. Giraldo, A. Paccagnella, and A. Minzoni, "Aspect ratio calculation in n-channel mosfets with a gate-enclosed layout", SOLID-STATE ELECTRONICS (2000) 44: pp. 981-989.

 

QUICK FACTS

If you are interested in any of these publications, please write to alessandro.paccagnella @dei.unipd.it