Our Research
Reliability and Radiation Effects on Advanced CMOS Technologies

 

 

This page presents a rapid overview of the main research areas of our groups, from basic radiation effects in MOSFETS to hardening-by-design solutions in FPGAs.

 
 

CMOS Technologies

Radiation effects at the oxide level. We study how total ionizing dose and microdose released by heavy ions may permanently affect the characteristics of devices manufactured using advanced technologies, such as SOI, strain-inducing techniques, and high-k gate oxides.

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Memories

From the interaction of heavy-ion tracks with tiny floating gates to the assessment of the role of the peripheral circuitry, we investigate how radiation affects volatile and non-volatile technologies along the path of Moore’s law.

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Wearout, ESD, and Radiation effects

Interplay between radiation effects and wear-out of CMOS devices has been and is one of the key subjects of our research. Recently, also sensitivity to electrostatic has been added to the mix.

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FPGAs

Programmable logic components rely on a configuration memory to store their configuration data. Depending on the type of medium used, we assess how different radiation-induced effects may compromise the functionality of these devices.

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Not only CMOS...

Even though our core business is CMOS, we study radiation effects also on III-V semiconductors, LEDs, and MEMS, in collaboration with Prof. Meneghesso and Prof. Zanoni's group.

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